• 专利附录
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    • 专利摘要:
    The invention relates to a mechanical oscillator provided with a bar (11), said bar (11) comprising a first silicon layer (Cs1) comprising a crystal lattice extending in a first direction (Dsl) of a plane, a heat compensation layer (Co1) consisting of a material having a thermal coefficient of Young's modulus of sign opposite to that of silicon, and a second layer of silicon (Cs2) comprising a crystal lattice extending in a second direction ( Ds2) of the plane, the first (Ds1) and the second (Ds2) directions being offset by an angle of 45 ° in the plane of the layers, and the thermal compensation layer (Co1) extending between the first and second layers of silicon (Cs1, Cs2).
    公开号:FR3032810A1
    申请号:FR1551233
    申请日:2015-02-13
    公开日:2016-08-19
    发明作者:Vincent Gaff；Pierre-Marie Visse；Luca Ribetto
    申请人:Tronics Microsystems SA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The invention relates to the field of mechanical oscillators as well as to a method for producing a mechanical oscillator. The invention finds a particularly advantageous application for spiral springs for equipping the balance of a mechanical watch assembly such as a watch. BACKGROUND ART A mechanical oscillator is a device for maintaining the movement of a mass relative to a stable point under the effect of a force. The instantaneous force applied by the mechanical oscillator to the mass depends on several parameters, the stiffness of the material constituting the mechanical oscillator. The mechanical oscillator is conventionally constituted by a bar which can adopt very varied forms such as a straight segment, a helicoid or a spiral.
    [0002] Some precision applications, such as spiral springs for equipping the balance with a mechanical timepiece assembly, require a bar in the form of a spiral whose stiffness varies as little as possible depending on the temperature. The stiffness of a spring spiral type is given by: M K = - (f) with: 25 cf), the torsion angle of the spring and M, the return torque of the spiral spring. The equation of this return torque for a bar made of a specific material is given by: E Lw3 t 12 SPI 10 M = with: 3032810 2 E, the Young's modulus of the material used for the bar, L, the length of the bar, w, the width of the bar, and t, the thickness of the bar.
    [0003] The natural resonance frequency of the spiral is proportional to the square root of its stiffness. Therefore, the spiral frequency is proportional to the square root of the Young's modulus of the bar material. So, if Young's modulus varies with temperature, the spiral frequency will also vary with temperature. For a small variation in temperature, the spiral frequency therefore depends on the first order of the temperature variation of the Young's modulus. It is thus admitted that the following equation shows the variations of Young's modulus as a function of temperature: E = E0 (1 + ocE (T -T0)) with: (XE, the thermal coefficient of the Young's modulus, E, the Young's modulus at the temperature T, and E0, the Young modulus at the temperature To. It is known to manufacture mechanical oscillators by using complex alloys, as much by the number of components (iron, carbon, nickel, chromium, tungsten, molybdenum, beryllium, niobium ...) than by the metallurgical processes used to obtain a self-compensation of the variations of the modulus of elasticity of the metal by combining two contrary influences: that of the temperature and that of the magneto constriction (contraction of magnetic bodies under the effect of magnetization) However, these metal oscillators are difficult to manufacture.First, because of the complexity of the processes used to make the alloys, the intrinsic mechanical properties Metal prices are not constant from one production to another. Then, the setting, which is the technique to ensure that the oscillator is regular, is tedious and long. This operation requires many manual interventions and many defective parts must be eliminated. For these reasons, production is expensive and maintaining consistent quality is an ongoing challenge.
    [0004] It is also known to produce mechanical oscillators by etching a silicon wafer in order to improve the regularity and the precision of design. The methods of making such mechanical oscillators generally use monocrystalline silicon wafers. Thus, these mechanical oscillators have a predetermined crystallographic direction with respect to the silicon wafer used, for example the set of directions <100>. However, the Young's modulus for monocrystalline silicon is not identical in all directions of the material and this induces a difference in mechanical behavior as a function of the axis of the movement.
    [0005] Swiss Patent Application No. 699,780 discloses a spiral-type mechanical oscillator made from a monocrystalline silicon wafer. The temperature variations of the Young's modulus of the spiral bar are compensated by two amorphous metal layers disposed inside the silicon bar and whose thermal coefficient of the Young's modulus is opposite to that of the silicon. This document does not make it possible to compensate the temperature variations of the Young's modulus in the same way in several directions of the plane of the monocrystalline silicon wafer.
    [0006] European Patent Nos. 1,422,436 and 2,215,531 also disclose a spiral-type mechanical oscillator made from a monocrystalline silicon wafer. The temperature variations of the Young's modulus are compensated by an amorphous silicon oxide layer disposed around a silicon bar. The thermal coefficient of Young's modulus for silicon is -64 × 10 -6 K -1 and the thermal coefficient of Young's modulus for silicon oxide is 187.5 × 10 at room temperature, about 20 ° C. . European Patent No. 1,422,436 proposes to compensate the variations of the Young's modulus of the silicon bar in several directions of a plane by means of a modulation of the width of the bar according to the stresses expected by the bar. This solution is particularly complex to implement because it requires knowing all the stresses expected on the bar and adapt the shape of the bar accordingly.
    [0007] European patent No. 2,215,531 proposes to solve this problem by using a specific silicon rod oriented along the crystallographic axis {1,1,1} which has similar mechanical characteristics in several directions of a plan.
    [0008] This embodiment requires a very particular silicon which strongly constrains the manufacturing process of the mechanical oscillator. The technical problem of the invention therefore consists in proposing a simple-to-manufacture monocrystalline silicon mechanical oscillator whose variations in mechanical characteristics as a function of temperature are compensated in the same way in all directions of a plane. SUMMARY OF THE INVENTION The present invention proposes to answer this technical problem by an assembly of two monocrystalline silicon layers, whose directions of the crystal lattices are shifted, by interposing a thermal compensation layer. According to a first aspect, the invention relates to a mechanical oscillator provided with a bar, said bar comprising a first silicon layer comprising a crystal lattice extending in a first direction of a plane, a thermal compensation layer consisting of a material having a thermal coefficient of Young's modulus of sign opposite to that of silicon, and a second silicon layer having a crystal lattice extending in a second plane direction, the first and second directions being offset by an angle of 45 ° in the plane of the layers, and the thermal compensation layer extending between the first and second silicon layers. The invention thus makes it possible to obtain a mechanical oscillator whose mechanical behavior is identical in all directions of the plane whatever the temperature. The variation of the Young's modulus for monocrystalline silicon between several directions of the material is compensated by the presence of two identical monocrystalline silicon layers shifted by 45 °. The influence of the thermal coefficient of the Young's modulus on the mechanical characteristics as a function of the temperature is canceled by means of the thermal compensation layer. Thus, the bar generally behaves substantially in the same way irrespective of the direction of the plane considered and whatever the temperature. By choosing, for example, an isotropic thermal compensation layer 5 in the (or amorphous) plane, the latter also has a thermal coefficient of the Young's modulus which is also isotropic. This heat compensation layer thus compensates homogeneously for the stiffness variations experienced by the bar. In addition, it is not necessary to provide an isotropic monocrystalline network in a plane that would require a complex manufacturing process. According to one embodiment, said bar comprises a third silicon layer comprising a crystal lattice extending in a third direction parallel to the direction of the first silicon layer, and a second thermal compensation layer consisting of a material having a thermal coefficient of Young's modulus of sign opposite to that of silicon, each thermal compensation layer being disposed between two superimposed silicon layers, the direction of the silicon layer, disposed between the two other silicon layers, being offset by an angle of 45 ° with the direction of the other two layers of silicon.
    [0009] This embodiment, by multiplying the layers, makes it possible to limit the thickness of each thermal compensation layer. According to one embodiment, said bar comprises an outer layer consisting of a material having a thermal coefficient of Young's modulus of sign opposite to that of silicon. According to one embodiment, the thermal compensation layer whose material has a thermal coefficient of Young's modulus of sign opposite to that of silicon is made of silicon oxide. This embodiment facilitates the manufacturing process of the mechanical oscillator since the silicon oxide is obtained from the silicon in contact with the air or in an oxidation chamber.
    [0010] According to one embodiment, the volume ratio between the material having a thermal coefficient of Young's modulus of sign opposite to that of silicon and the silicon layers, depends on the nature of this material. For example, for silicon oxide, it is between 5% and 7%, preferably about 6%, at room temperature, about 20 ° C. This embodiment makes it possible to effectively compensate for the thermal sensitivity of the bar. According to one embodiment, the mechanical oscillator is a spiral spring intended to equip the balance wheel with a mechanical timepiece assembly and formed of a spiral bar. The invention is particularly adapted to spiral springs used for the realization of precision watches. According to a second aspect, the invention relates to a method for producing a mechanical oscillator previously described.
    [0011] According to one embodiment, the method comprises the following steps: depositing a thermal compensation layer on a silicon layer of a first silicon-on-insulator silicon wafer, etching the mechanical oscillator pattern on the layer of silicon. thermal compensation and on the silicon layer of the first silicon-on-insulator wafer, sealing a second silicon-on-insulator silicon wafer on the first silicon wafer with a rotation of 45 ° with respect to the first silicon wafer of so that a silicon layer of the second silicon wafer is in contact with the thermal compensation layer, remove a substrate and an insulating layer of the first silicon wafer on insulator, etch the silicon layer of the second silicon wafer using the first silicon layer as a mask, and removing a substrate and an insulation layer from the second silicon wafer m on insulator, the first and second silicon-on-insulator silicon wafer consisting of a substrate surmounted by an insulating layer and then a monocrystalline silicon layer.
    [0012] According to one embodiment, the method comprises the steps of: depositing a first portion of a thermal compensation layer on a silicon layer of a first silicon-on-silicon wafer, depositing a second portion of the thermal compensation layer on a silicon layer of a second silicon-on-insulator silicon wafer, etching the mechanical oscillator pattern on the first part of the thermal compensation layer and on the silicon layer of the first silicon wafer on insulator, etching the pattern 5 of the mechanical oscillator on the second part of the thermal compensation layer and on the silicon layer of the second wafer of silicon on insulator, seal the second wafer of silicon on the first wafer of silicon with a rotation of 45 ° with respect to the first silicon wafer so that the two parts of the compensation layer the Rmique are in contact, remove a substrate and an insulation layer from the second silicon-on-insulator wafer, and remove a substrate and an insulator layer from the first silicon-on-insulator wafer, the first and second wafer silicon-on-insulator type silicon consisting of a substrate surmounted by an insulating layer and then a monocrystalline silicon layer.
    [0013] According to one embodiment, the method comprises the following steps: etching the pattern of the mechanical oscillator on a first silicon layer, a second insulator layer and a second silicon layer of a double-type silicon wafer silicon-on-insulator, and removing a substrate and a first layer of insulator from the silicon wafer, the first silicon-on-insulator silicon wafer 20 consisting of a substrate surmounted by a first layer of insulator, a first monocrystalline silicon layer, a second insulating layer and then a second monocrystalline silicon layer, the first and second silicon layers of the double silicon-on-insulator silicon wafer having crystalline lattices of which the directions are shifted by an angle of 45 °.
    [0014] According to one embodiment, the method comprises the following steps: etching the pattern of the mechanical oscillator on a second silicon layer and second insulating layer of a first silicon wafer of the silicon-on-insulator type, sealing a second silicon wafer on the second silicon layer of the first silicon wafer, removing a substrate and a first layer of insulator from the first silicon wafer, etching the pattern of the mechanical oscillator on a first silicon layer of the first silicon wafer, and remove the second silicon wafer, the first insulating double silicon silicon wafer being constituted by a substrate surmounted by a first layer of insulator, a first layer of silicon a second layer of insulation and then a second monocrystalline silicon layer, the first and the second silicon layer of the wafer of silicon of the double silicon on insulator type comprising crystalline lattices whose directions are shifted by an angle of 45 °, the second silicon wafer consisting of a single layer of silicon, whether or not surmounted by a layer of insulator, thermal compensation. According to one embodiment, the method comprises the steps of: depositing a thermal compensation layer on a silicon layer of a first silicon-on-insulator silicon wafer, etching the mechanical oscillator pattern on the thermal compensation and on the silicon layer of the first silicon wafer, sealing a second silicon wafer on the first silicon wafer with a rotation of 45 ° with respect to the first silicon wafer 15 so that the second silicon wafer in contact with the thermal compensation layer, thin the second silicon wafer, etch the pattern of the mechanical oscillator on the second wafer of silicon, and remove a substrate and an insulating layer from the first wafer of silicon, the first silicon-on-insulator silicon wafer consisting of a substrate surmounted by a layer of insulator then of a layer of silicon monocrystalline, the second silicon wafer consisting of a single silicon layer or not surmounted by a layer of thermal compensation insulation. According to one embodiment, the method comprises the following steps: thinning a substrate of a silicon-on-insulator silicon wafer, etching the pattern of the mechanical oscillator on a silicon layer of the silicon wafer, depositing a structuring layer on the substrate of the silicon wafer, etching the pattern of the mechanical oscillator on a substrate and an insulating layer of the silicon wafer using the first silicon layer as a mask, and removing the layer of 30 structuring of the substrate of the silicon wafer, the silicon-on-insulator silicon wafer consisting of a silicon substrate surmounted by an insulator layer and then a monocrystalline silicon layer, the first silicon layer and the Silicon substrate of the silicon wafer having crystal lattices whose directions are shifted by an angle of 45 °. According to one embodiment, the method comprises an additional step of oxidation of the bar. According to one embodiment, at least one silicon wafer is of the triple silicon on insulator type consisting of a substrate surmounted by a first layer of insulator, a first monocrystalline silicon layer, a second layer of silicon, insulation, 10 of a second monocrystalline silicon layer, a third insulator layer and then a third monocrystalline silicon layer, the first and second silicon layers of the silicon-on-insulator type silicon wafer comprising crystal lattices whose directions are shifted by an angle of 45 °.
    [0015] SUMMARY DESCRIPTION OF THE FIGURES The manner of carrying out the invention as well as the advantages derived therefrom will emerge clearly from the following embodiment given by way of indication but not by way of limitation, in support of the appended figures in which FIGS. 12 show: FIG. 1 is a sectional view of a bar of a mechanical oscillator according to a first design of the invention; - Figure 2: a schematic representation of the different directions of the axes of the crystal lattice on a silicon wafer type <100>; 3: a representation of the mechanical characteristics of one of the two silicon layers of the bar of FIG. 1 as a function of the direction in the plane of the axis of the crystal lattice; - Figure 4: a sectional view of a bar of a mechanical oscillator according to a second embodiment of the invention; - Figure 5: a sectional view of a bar of a mechanical oscillator according to a third embodiment of the invention; - Figure 6: a sectional view of a bar of a mechanical oscillator according to a fourth embodiment of the invention; - Figure 7: a schematic representation of the embodiment of the bar 3032810 10 of Figure 1 according to a first embodiment; - Figure 8: a schematic representation of the embodiment of the bar of Figure 1 according to a second embodiment; - Figure 9: a schematic representation of the embodiment of the bar 5 of Figure 1 according to a third embodiment; - Figure 10: a schematic representation of the embodiment of the bar of Figure 1 according to a fourth embodiment; - Figure 11: a schematic representation of the embodiment of the bar of Figure 1 according to a fifth embodiment; and FIG. 12 is a diagrammatic representation of the embodiment of the bar of FIG. 1 according to a sixth embodiment. DETAILED DESCRIPTION OF THE INVENTION FIG. 1 illustrates a bar 11 of a mechanical oscillator, for example in the form of a straight segment, a helicoid or a spiral, comprising a stack of three layers: a first monocrystalline CsI silicon layer directly in contact with a thermal compensation layer Col directly in contact with a second monocrystalline Cs2 silicon layer. The first layer of silicon Csl 20 extends over a height hsl and over the entire width L of the bar 11. The second silicon layer Cs2 extends over a height hs2 substantially equal to the height hsl and over the entire width L of Bar 11. The thermal compensation layer Col extends over a height hl much lower than the two heights hsl, hs2 and over the entire width L of the bar 11.
    [0016] The two silicon layers Cs1, Cs2 comprise two identical crystal lattices. Each crystal lattice of each silicon layer Cs1, Cs2 has a predetermined direction Ds1, Ds2. The term "direction" of the silicon layers, the direction of a crystal lattice according to which the crystal lattice has a maximum of the Young's modulus in the plane of the corresponding silicon layer Cs1, Cs2. The hatching of FIGS. 1, 4, 5 and 6 makes it possible to diagrammatically visualize the offsets between the directions Ds1, Ds2 and Ds3. However, the offsets between the directions Ds1, Ds2 and Ds3 are carried out in the plane of the silicon layers Cs1, Cs2 and Cs3 and are therefore not visible in the same way on a real cross-sectional view of the bar 11. by "a crystal lattice extends in a direction" the crystal lattice has a crystal structure whose maximum of the Young's modulus is reached in the predetermined direction.
    [0017] Figure 2 illustrates a <100> single crystal lattice of the first Csl silicon layer modeled along three linear springs. For a crystal lattice of <100> type, the mechanical strength of the first silicon layer Cs1 in the crystalline direction [-110] of the x-axis and in the crystalline direction [-1-10] of the y-axis is 10 more important than the mechanical resistance in the crystalline directions [100] of the axis xl and [010] of the axis yl. FIG. 3 illustrates the mechanical characteristics of a <100> type wafer as a function of the angular direction of a force F identified in the plane of the crystalline lattice of the <100> type at a constant temperature. E represents the variation of the Young's modulus. This mechanical quantity has local maxima in the <110> and <110> directions and local minima in the <100> and <010> directions. It can thus be deduced that the crystal lattice stiffness of the <100> type of the first silicon layer Cs1 is different between the x [-110] and yl [010] directions. This stiffness is identical between the directions x [-110] and y [-1-10].
    [0018] Given the thickness of the thermal compensation layer Col, the mechanical properties of the bar 11 depend to a large extent on the mechanical properties of the two silicon layers Cs1, Cs2. If the two silicon layers Cs1, Cs2 have the same crystalline orientation and the same height so that hs1 = hs2; the resistance Ftotx of the bar 11 in the direction x [-110] is equal to the sum of the resistances F1, F2 of the two silicon layers Cs1, Cs2. The Young modulus E_ 110 in the x [-110] direction of the two silicon layers Cs1, Cs2 being identical, the resistors F1 and F2 are also identical so that: hsl xLxE_110 Fi = F2 = £ with E representing the coefficient deformation.
    [0019] The resistance Ftotx of the bar 11 in the direction x [-110] is therefore equal to: 2 x hsl x L x E_11.0 Ftot X = F1 + F2 = This resistance Ftotx in the direction x [-110] is identical according to the 3032810 12 direction Y [-1-10]. However, the resistance Ftoty1 of the bar 11 in the direction yl [010] is equal to: 2x hsl x L x E010 = F1 + F2 = Ftot yl 5 Now, Figure 3 reveals that the Young's modulus E010 of the layers of silicon Cs1, Cs2 in the direction yl [010] is lower than the Young modulus E_110 of the silicon layers Cs1, Cs2 in the direction x [-110] which induces a difference of the resistances between the directions x [-110] and yl [010]. Thus, the resistance Ftot x of the bar 11 in the direction x [-110] is greater than the resistance Ftoty1 of the bar 11 10 in the direction yl [010]. The bar 11 thus has a weakness of its resistance in the direction yl [010]. The invention proposes to compensate for this difference in resistance by shifting the directions Ds1, Ds2 of the silicon layers Cs1 and Cs2 by an angle of 45 ° in the plane of the silicon layers Cs1, Cs2. Thus, the Young's modulus in a given direction is different between the two layers Cs1 and Cs2. For example, in the yl [010] direction, the Young's modulus E_110 of the first silicon layer Cs1 differs from the Young's modulus E010 of the second silicon layer Cs2. The resistance Ftot x of the bar 11 in the direction x [-110] is therefore equal to: 20 hsl = F1 + F2 = XLX (E_110 E010) Ftot X £ The resistance Ftot yl of the bar 11 in the direction yl [010] is equal to: hsl XL x (E010 + E1_10) = F1 + F2 =. Ftot yl £ Since E1_10 is equal to E_110, the resistances are identical in both directions x [-110] and yl [010]. The structure of the bar 11 of FIG. 1 thus makes it possible to obtain identical mechanical characteristics in all the x, y and yl directions of the crystal lattice. The thermal compensation layer Col consists of a material having a thermal coefficient of the Young's modulus of sign opposite to that of the silicon so that the variation of the mechanical strength of the silicon layers Cs1, Cs2 as a function of the temperature is compensated by the thermal compensation layer Col. Preferably, the thermal compensation layer Col is silicon oxide. The thermal coefficient of Young's modulus for silicon is -64.10-6K1 and the thermal coefficient of Young's modulus for silicon oxide is 187.5.10-6K-1 at room temperature, about 20 ° C. . Thus, to compensate for the variation in the mechanical strength of the silicon layers Cs1, Cs2 as a function of temperature, the volume ratio between the silicon layers Cs1, Cs2 and the thermal compensation layer Col is close to 6% at a temperature ambient, about 20 ° C. In Figure 1, the surface of the section hol.L is therefore substantially equal to 6% of the area of sections L.hs1 and L.hs2.
    [0020] FIG. 4 illustrates a variant of the invention in which the bar 11 comprises three layers of silicon Cs1, Cs2, Cs3 intersected by two thermal compensation layers Col, Co2. The first and third silicon layers Cs1, Cs3 comprise crystal lattices oriented in the same direction Ds1, Ds3. The second silicon layer Cs2 disposed between the first and third silicon layers Cs1, Cs3 comprises a crystal lattice whose direction Ds2 is shifted by an angle of 45 ° with the directions Ds1, Ds3. In order to obtain identical mechanical characteristics in all the x, y and yl directions of the crystal lattice, the height hs2 of the second silicon layer Cs2 must be equal to the sum of the heights hsl and hs3 of the two other layers of silicon Csl , Cs3. In order to compensate for the temperature drift, the sum of the heights hol and ho2 must be equal, in the case of silicon oxide, to about 6% of the sum of the heights hs1, hs2 and hs3. FIGS. 5 and 6 illustrate a variant in which a thermal compensation layer is also disposed around the bar 11 of FIGS. 1 and 4. This embodiment makes it possible to limit the thickness of the thermal compensation layer Col placed between the layers of silicon Cs1, Cs2. For example, in the case of Figure 5, the surface of the thermal compensation layer comprises the following areas: 30 - hol.L, area of the outer layer Coe above the bar 11, - Lol .H, area of the outer layer Coe on the left of the bar 11, - Lo2.H, area of the outer layer Coe on the right of the bar 11, - ho3.L, area of the outer layer Coe below the bar 11 and 3032810 14 - ho2.L, area of the layer Col between the silicon layers Csl, Cs2. The sum of these surfaces must also be equal, in the case of silicon oxide, to approximately 6% of the sum of the hs1.Ls and hs2.Ls surfaces of the silicon layers Cs1, Cs2 in order to compensate for the temperature drift. . Thus, the thickness of the thermal compensation layers, i.e., of the inner layer Col and the outer layer Coe, is reduced compared to the embodiment of FIG. 1. FIG. identical embodiment in which the bar comprises three layers of silicon Csl, Cs2 and Cs3 as described with Figure 4.
    [0021] Figures 7 to 12 illustrate methods of making the bar 11 of Figure 1. The method of Figure 7 uses two SOI silicon-on-insulator silicon wafers. Each silicon-on-insulator wafer SOI comprises a substrate Sul, Su2 surmounted by a layer of insulator C11, C12 and then a layer of monocrystalline silicon CsI, Cs2. The substrate Sul, Su2, may be made of silicon. In a first step 21, a thermal compensation layer Col is deposited on the silicon layer Cs1 of the first wafer of the SOI type. In a second step 22, a pattern of the mechanical oscillator is etched on the thermal compensation layer Col and on the silicon layer Cs1. In a third step 23, the silicon layer Cs2 of the second wafer is sealed on the thermal compensation layer Col. The second wafer is shifted by an angle of 45 ° with respect to the first wafer before this sealing step 23 so that the directions Ds1, Ds2 of the crystal lattices are also shifted by an angle of 45 °. In a step 24, the assembly is turned over and the substrate Sul and the insulating layer Cil of the first slab are removed. In a step 25, the Cs2 silicon layer of the second wafer is etched to the mechanical oscillator pattern using the first silicon layer as an etch mask. Engraving can be performed by a deep reactive ion etching technique (also known as DRIE for "Deep Reactive Ion Etching"). The substrate Su2 and the insulator layer Ci2 of the second silicon wafer are then removed in a step 26 to release the mechanical oscillator. Figure 8 illustrates a production method also using two SOI wafers. In steps 32 and 33, two portions Cop1, Cop2 of the thermal compensation layer Col are deposited respectively on each silicon layer Cs1, Cs2 of the two SOI wafers. In steps 34, 35, the patterns of the oscillator are then etched on the two parts Copl and Cop2 of the thermal compensation layer Col as well as on the two silicon layers Cs1, Cs2 of the two wafers. In a step 36, the two parts Cop1, Cop2 are then sealed with an offset of 45 ° between the wafers so as to form the complete thermal compensation layer Col. Steps 37, 38 consist in eliminating the two substrates Sul, Su2 and the two insulating layers C11, C12 in order to release the mechanical oscillator.
    [0022] Figure 9 illustrates a production method using a single double-SOI wafer. A wafer of the double-SOI type consists of a substrate Sul surmounted by a first layer of insulator Cil, a first silicon monocrystalline silicon layer Sil, a second layer of insulator Ci2 and then a second layer. Si2 monocrystalline silicon. The second insulating layer C12 thus performs the function of the thermal compensation layer Col of the bar 11. The first silicon layer Cs1 and the second silicon layer Cs2 comprise crystal lattices whose directions are shifted by an angle of 45 °. A first step 41 consists of etching the pattern of the mechanical oscillator in the first silicon layer Cs1, the second insulating layer Ci2 and the second silicon layer Cs2. A second step 42 is to remove the substrate Sul and the first insulator layer C11 to release the mechanical oscillator. Figure 10 illustrates a variant of the method of Figure 9 using a double-SOI wafer. A first step 51 consists of etching the pattern of the mechanical oscillator in the second silicon layer Cs2 and the second insulating layer Ci2. In a second step 52, a silicon wafer Si2 is sealed on the second silicon layer Cs2. This Si2 silicon wafer is a sacrificial layer that serves only as support for the structure and will be removed in a subsequent step. In a step 53, the assembly is turned over and the substrate Sul as well as the first insulating layer Cil of the first wafer are removed. The pattern of the mechanical oscillator is etched on the first silicon layer Cs1 in a step 54 and, in a step 55, the silicon wafer Si2 is removed to release the mechanical oscillator. This variant of the method of FIG. 9 can be implemented when the bar 11 is too thick and the etching step 41 does not enable the first silicon layer Cs1 to be etched correctly. Figure 11 illustrates a method of making using an SOI wafer and a Si2 wafer. In a first step 61, a thermal compensation layer Col is deposited on the silicon layer Cs1 of the first wafer of the SOI type. In a second step 62, a pattern of the mechanical oscillator is etched on the thermal compensation layer Col and on the silicon layer Cs1. The silicon wafer Si 2 is then sealed with a 45 ° shift on the thermal compensation layer Col in a step 63. Step 64 consists in thinning the silicon wafer Si 2 until reaching the desired height hs 2 for the second Cs2 silicon layer of the bar 11 of Figure 1. In a step 65, the pattern of the mechanical oscillator is etched on the second silicon layer Cs2 formed by the Si2 silicon wafer and, in a step 66, the substrate Sul and the insulating layer C11 are removed to release the mechanical oscillator. FIG. 12 illustrates a production method using a single SOI type wafer in which the substrate Sul is made of silicon and forms the second silicon layer Cs2 of FIG. 1. The thermal compensation layer Col is formed by the layer of silicon. Cil insulator preferentially made of silicon oxide. A first step 71 consists in thinning the substrate Sul until reaching the desired height hs2 for the second silicon layer Cs2 of the bar 11 of FIG. 1. In a step 72, the mechanical oscillator pattern is etched on the layer of silicon CsI. A structuring layer Cst is then deposited on the thinned substrate Sul in a step 73 in order to stiffen the structure, then the pattern of the mechanical oscillator is etched in the layers of insulator C11 and substrate Sul in a step 74. a step 75, the structuring layer Cst is removed to release the mechanical oscillator. Alternatively, these methods can be adapted to realize one of the variants of FIGS. 4 to 6. For example, the realization of a thermal compensation outer layer Coe can be carried out in a silicon oxidation chamber thus forming a layer of silicon oxide around the bar 11. The realization of a second thermal compensation layer Co2 and a third layer of silicon Cs3 may be achieved, for example, by the sealing of a third silicon-type wafer on insulation and corresponding additional etching steps. The invention thus makes it possible to obtain a mechanical oscillator whose stiffness is isotropic in the plane and independent of the temperature without increasing the size of the bar and without using an isotropic silicon layer in the plane.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. Mechanical oscillator provided with a bar (11), said bar (11) comprising: a first silicon layer (Cs1) comprising a crystal lattice extending in a first direction (Dsl) of a plane, and a layer of thermal compensation (Col) constituted by a material having a thermal coefficient of Young's modulus of sign opposite to that of silicon, characterized in that said rod (11) also comprises a second silicon layer (Cs2) comprising a crystal lattice extending in a second direction (Ds2) of the plane, - the first (Dsl) and the second (Ds2) direction being offset by an angle of 45 ° in the plane of the layers, and - the thermal compensation layer (Col ) extending between the first and second silicon layers (Cs1, Cs2).
    [0002]
    2. Mechanical oscillator according to claim 1, characterized in that said bar (11) comprises: a third layer of silicon (Cs3) having a crystal lattice extending in a third direction (Ds3) parallel to the direction of the first layer silicon (Dsl), and - a second thermal compensation layer (Co2) consisting of a material having a thermal coefficient of Young's modulus of sign opposite to that of silicon, each thermal compensation layer (Col, Co2) being disposed between two superimposed silicon layers (Cs1, Cs2, Cs3), - the direction of the silicon layer (Cs2), disposed between the two other silicon layers (Cs1, Cs3), being shifted by an angle of 45 ° with the direction of the two other silicon layers (CsI, Cs3).
    [0003]
    3. Mechanical oscillator according to claim 1 or 2, characterized in that said bar (11) comprises an outer layer (Coe) consisting of a material having a thermal coefficient of the Young's modulus of opposite sign to that of silicon. 3032810 19
    [0004]
    4. Mechanical oscillator according to one of claims 1 to 3, characterized in that the thermal compensation layer (Col, Co2, Coe) whose material has a thermal coefficient of Young's modulus of opposite sign to that of silicon is 5 made of silicon oxide (SiO2).
    [0005]
    5. Mechanical oscillator according to one of claims 1 to 4, characterized in that the volume ratio between the material having a thermal coefficient Young's modulus of opposite sign to that of silicon and the silicon layers (Csl, Cs2, Cs3) 10 is between 5% and 7%, preferably close to 6%, at room temperature, about 20 ° C.
    [0006]
    6. Mechanical oscillator according to one of claims 1 to 5, characterized in that the mechanical oscillator is a spiral spring for equipping the balance of a mechanical watch assembly and formed of a bar (11) in spiral.
    [0007]
    7. A method of producing a mechanical oscillator according to one of claims 1 to 6, characterized in that it comprises the step of: etching (22) a pattern of the mechanical oscillator on the first silicon layer (Csl), the thermal compensation layer (Col) and the second silicon layer (Cs2).
    [0008]
    8. Process for producing a mechanical oscillator according to claim 7, characterized in that it comprises the following steps: depositing (21) a thermal compensation layer (Col) on a silicon layer (Cs1) of a first silicon-on-insulator (SOI) silicon wafer, etching (22) the mechanical oscillator pattern on the thermal compensation layer (Col) and on the silicon layer (Cs1) of the first silicon wafer on insulation (SOI), sealing (23) a second silicon-on-insulator (SOI) silicon wafer on the first silicon wafer with a rotation of 45 ° with respect to the first silicon wafer so that a silicon layer (Cs2) of the second silicon wafer is in contact with the thermal compensation layer (Co 1), remove (24) a substrate (Sul) and an insulator layer (Cil) from the first silicon wafer on insulator (SOI), 5 - etch (25) the silicon layer (Cs 2) of the second silicon wafer using the first silicon layer (Cs1) as a mask, and removing (26) a substrate (Su2) and an insulating layer (C12) from the second wafer of silicon on insulator (SOI) ), the first and second silicon-on-insulator (SOI) silicon wafers being constituted by a substrate (Sul, Su2) surmounted by an insulating layer (Cil, C12) and then by a silicon layer monocrystalline (CsI, Cs2).
    [0009]
    9. A method of producing a mechanical oscillator according to claim 7, characterized in that it comprises the following steps: depositing (32) a first portion (Copi) of a thermal compensation layer (Col) on a silicon layer (Cs1) of a first silicon-on-insulator (SOI) silicon wafer, - depositing (33) a second part (Cop2) of the thermal compensation layer (Col) on a silicon layer (Cs2) of a second silicon-on-insulator (SOI) silicon wafer, etching (34) the mechanical oscillator pattern on the first part (Copi) of the thermal compensation layer (Col) and on the silicon (CsI) of the first silicon-on-insulator (SOI) wafer, etch (35) the pattern of the mechanical oscillator on the second part (Cop2) of the thermal compensation layer (Col) and on the silicon layer (Cs2) of the second silicon-on-insulator (SOI) wafer, seal (36) the second gal on the first silicon wafer with a rotation of 45 ° with respect to the first silicon wafer so that the two parts (Copi, Cop2) of the thermal compensation layer 30 (Col) are in contact, - remove (37) a substrate (Su2) and an insulation layer (C12) of the second silicon-on-insulator (SOI) wafer, and 3032810 21 - removing (38) a substrate (Sul) and an insulation layer (Cil) ) of the first silicon-on-insulator (SOI) wafer, the first and second silicon-on-insulator (SOI) silicon wafers consisting of a substrate (Sul, Su2) surmounted by a layer of insulator (Cil , Ci2) and then a monocrystalline silicon (CsI, Cs2) layer.
    [0010]
    10. A method of producing a mechanical oscillator according to claim 7, characterized in that it comprises the following steps: - etching (41) the pattern of the mechanical oscillator on a first silicon layer (Cs1), a second insulation layer (Ci2) and a second silicon layer (Cs2) of a double silicon-on-insulator (double-SOI) silicon wafer, and - (42) removing a substrate (Sul) and a first layer insulator (Cil) of the silicon wafer, the first double silicon-on-insulator (double-SOI) silicon wafer consisting of a substrate (Sul) surmounted by a first insulating layer (Cil) , a first monocrystalline silicon (CsI) layer, a second insulating layer (C12) and then a second monocrystalline silicon (Cs2) layer, the first and second silicon layers (CsI, Cs2) silicon double-on-insulator (double-SOI) silicon wafer having crista gratings llins whose directions are shifted by an angle of 45 °.
    [0011]
    11. A method of producing a mechanical oscillator according to claim 7, characterized in that it comprises the following steps: - etching (51) the pattern of the mechanical oscillator on a second layer of silicon (Cs2) and second insulation layer (Ci2) of a first silicon wafer of the double silicon-on-insulator type (double-SOI), sealing (52) a second silicon wafer (Si2) on the second silicon layer (Cs2) of the first silicon wafer, removing (53) a substrate (Sul) and a first insulator layer (Cil) from the first silicon wafer, etching (54) the pattern of the mechanical oscillator on a first silicon layer ( Csl) of the first silicon wafer, and 3032810 22 - to remove (55) the second silicon wafer (Si2), the first silicon wafer of the double silicon-on-insulator type (double-SOI) consisting of a substrate (Sul ) surmounted by a first layer of insulation (Cil), a first couc silicon monocrystalline silicon (CsI), a second insulating layer (C12) and then a second monocrystalline silicon layer (Cs2), the first and second silicon layers (CsI, Cs2) of the double silicon-on-insulator silicon (double-SOI) having crystal lattices whose directions are shifted by an angle of 45 °, the second silicon wafer (Si2) consisting of a single layer of silicon, whether topped or not a layer of insulation.
    [0012]
    12. A method of producing a mechanical oscillator according to claim 7, characterized in that it comprises the following steps: depositing (61) a thermal compensation layer (Col) on a silicon layer (Csl) of a first silicon-on-insulator (SOI) silicon wafer; etching (62) the mechanical oscillator pattern on the thermal compensation layer (Col) and on the silicon layer (Cs1) of the first silicon wafer - sealing (63) a second silicon wafer (Si2) on the first silicon wafer with a rotation of 45 ° with respect to the first wafer of silicon so that the second wafer of silicon (Si2) is in contact with the thermal compensation layer (Col), - thinning (64) the second silicon wafer (Si2), - engraving (65) the pattern of the mechanical oscillator on the second silicon wafer (Si2), and - removing ( 66) a substrate (Sul) and an insulation layer (Cil) of the first silicon wafer, the first silicon-on-insulator silicon wafer (SOI) consisting of a substrate (Sul) surmounted by an insulating layer (Cil) and then by a monocrystalline silicon (CsI) layer. - The second silicon wafer (Si2) consisting of a single silicon layer or not surmounted by an insulating layer. 3032810 23
    [0013]
    13. A method of producing a mechanical oscillator according to claim 7, characterized in that it comprises the following steps: 5 - thin (71) a substrate (Sul) of a silicon wafer silicon on insulator (SOI - etching (72) the pattern of the mechanical oscillator on a silicon layer (Cs1) of the silicon wafer, depositing (73) a structuring layer (Cst) on the substrate (Sul) of the wafer 10 of silicon, - etching (74) the pattern of the mechanical oscillator on a substrate (Sul) and an insulator layer (Cil) of the silicon wafer using the first silicon layer as a mask, and removing (75) the structuring layer (Cst) of the substrate (Sul) of the silicon wafer, - the silicon wafer of the silicon-on-insulator (SOI) type consisting of a silicon substrate (Sul) surmounted by a layer of insulator (Cil) then a monocrystalline silicon (CsI) layer, the first silicon layer (CsI) and the substrate (Sul) e n Silicon silicon wafer silicon on insulator (SOI) having crystal lattices whose directions are shifted by an angle of 45 °.
    [0014]
    14. A method of producing a mechanical oscillator according to one of claims 8 to 13, characterized in that it comprises an additional step of oxidation of the bar. 25
    [0015]
    15. A method of producing a mechanical oscillator according to one of claims 8 to 14, characterized in that it comprises an additional step of affixing a second thermal compensation layer (Co2) and a third layer of silicon (Cs3 ).
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    同族专利:
    公开号 | 公开日
    WO2016128694A1|2016-08-18|
    JP2018511032A|2018-04-19|
    US20180004161A1|2018-01-04|
    CN107207242A|2017-09-26|
    FR3032810B1|2017-02-24|
    EP3256910B1|2018-10-31|
    EP3256910A1|2017-12-20|
    US10095184B2|2018-10-09|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1551233A|FR3032810B1|2015-02-13|2015-02-13|MECHANICAL OSCILLATOR AND METHOD OF MAKING SAME|FR1551233A| FR3032810B1|2015-02-13|2015-02-13|MECHANICAL OSCILLATOR AND METHOD OF MAKING SAME|
    EP16709989.4A| EP3256910B1|2015-02-13|2016-02-12|Mechanical oscillator and associated production method|
    US15/544,754| US10095184B2|2015-02-13|2016-02-12|Mechanical oscillator and associated production method|
    CN201680008265.3A| CN107207242A|2015-02-13|2016-02-12|Mechnical oscillator and its related production|
    PCT/FR2016/050333| WO2016128694A1|2015-02-13|2016-02-12|Mechanical oscillator and associated production method|
    JP2017538347A| JP2018511032A|2015-02-13|2016-02-12|Mechanical vibrator and related manufacturing method|
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